11N60C3(2005) データシートの表示（PDF） - Infineon Technologies
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| 11N60C3 Datasheet PDF : 0 Pages | |||
SPP11N60C3
SPI11N60C3, SPA11N60C3
13 Forward characteristics of body diode
IF = f (VSD)
parameter: Tj , tp = 10 µs
10 2 SPP11N60C3
A
10 1
10 0
10 -1
0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
VSD
15 Typ. switching time
t = f (RG), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, ID=11 A
350
ns
14 Typ. switching time
t = f (ID), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, RG=6.8Ω
70
ns
60
55
td(off)
50
45
40
35
30
25
20
tf
15
td(on)
10
5
tr
0
0
2
4
6
8
A
12
ID
16 Typ. drain current slope
di/dt = f(RG), inductive load, Tj = 125°C
par.: VDS=380V, VGS=0/+13V, ID=11A
3000
A/µs
250
2000
200
td(off)
1500
td(on)
150
tr
tf
1000
100
di/dt(off)
50
500
di/dt(on)
0
0
10 20 30 40 50 Ω
70
RG
Rev. 2.6
Page 8
0
0
20
40
60
80
Ω
120
RG
2005-09-21
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