SPP11N60C3, SPB11N60C3
Preliminary data
SPI11N60C3
5 Typ. output characteristic
6 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
ID = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
40
A
20V
10V
8V
32
28
22
A
7V
18
16
20V
8V
7V
7.5V
6V
6,5V
14
24
12
20
6V
10
16
8
12
5,5V
6
8
5V
4
4
4,5V
2
5.5V
5V
4.5V
4V
0
0 3 6 9 12 15 18 21 V 27
VGS
0
0
5
10
15
V
25
VDS
7 Typ. drain-source on resistance
RDS(on) =f(ID )
parameter: Tj=150°C, VGS
2
Ω
4V 4.5V 5V
5.5V
6V
1.6
1.4
1.2
8 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 7 A, VGS = 10 V
2.1 SPP11N60C3
Ω
1.8
1.6
1.4
1.2
1
1
0.8
6.5V
0.6
8V
20V
0.4
0 2 4 6 8 10 12 14 16 A 20
ID
Page 6
0.8
0.6
98%
0.4
typ
0.2
0
-60 -20
20
60 100 °C
180
Tj
2001-07-05