11N60C3(2005) データシートの表示（PDF） - Infineon Technologies
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| 11N60C3 Datasheet PDF : 0 Pages | |||
SPP11N60C3
SPI11N60C3, SPA11N60C3
Maximum Ratings
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 11 A, Tj = 125 °C
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s 4)
Symbol
dv/dt
Value
50
Unit
V/ns
Symbol
RthJC
RthJC_FP
RthJA
RthJA_FP
RthJA
Tsold
Values
Unit
min. typ. max.
-
-
1 K/W
-
-
3.8
-
-
62
-
-
80
-
-
62
-
35
-
-
- 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600
-
Drain-Source avalanche
V(BR)DS VGS=0V, ID=11A
- 700
breakdown voltage
-V
-
Gate threshold voltage
Zero gate voltage drain current
VGS(th)
IDSS
ID=500µA, VGS=VDS 2.1
VDS=600V, VGS=0V,
Tj=25°C
-
Tj=150°C
-
3 3.9
µA
0.1 1
- 100
Gate-source leakage current
IGSS
Drain-source on-state resistance RDS(on)
VGS=30V, VDS=0V
VGS=10V, ID=7A
Tj=25°C
Tj=150°C
-
- 100 nA
Ω
- 0.34 0.38
- 0.92 -
Gate input resistance
RG
f=1MHz, open drain
-
0.86
-
Rev. 2.6
Page 2
2005-09-21
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