2SC4617EB データシートの表示（PDF） - ROHM Semiconductor

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2SC4617EB

General purpose small signal amplifier (50V, 0.15A)

ROHM Semiconductor 

General purpose small signal amplifier (50V, 0.15A)

2SC4617EB

Data Sheet

Features

1) Excellent hFE linearity.

2) Complements the 2SA1774EB.

Structure

NPN silicon epitaxial

planar transistor

Dimensions (Unit : mm)

EMT3F

1.6

0.7

0.26

(3)

(1) Base

(2) Emitter

(3) Collector

∗ = Denotes hFE

(1)

(2)

0.5 0.5

0.13

1.0

Each lead has same dimensions

∗

Abbreviated symbol : B

Absolute maximum (Ta=25C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

Junction temperature

Range of storage temperature

∗1 Pw=1ms Single pulse

∗2 Each terminal mounted on a recommended land

Symbol

Limits

Unit

VCBO

60

V

VCEO

50

V

VEBO

7

V

IC

150

mA

ICP ∗1

200

PD ∗2

150

mW

Tj

150

°C

Tstg

−55 to +150

°C

Electrical characteristics (Ta=25C)

Parameter

Symbol Min.

Collector-emitter breakdown voltage BVCEO 50

Collector-base breakdown voltage BVCBO 60

Emitter-base breakdown voltage

BVEBO

7

Collector cutoff current

ICBO

−

Emitter cutoff current

IEBO

−

Collector-emitter saturation voltage VCE(sat) −

DC current gain

hFE

120

Transition frequency

fT

−

Output capacitance

Cob

−

Typ.

−

−

−

−

−

−

−

180

2

Max.

−

−

−

100

100

400

560

−

3.5

Unit

V

V

V

nA

nA

mV

−

MHz

pF

Conditions

IC=1mA

IC=50μA

IE=50μA

VCB=60V

VEB=7V

IC/IB=50mA/5mA

VCE=6V, IC=1mA

VCE=12V, IE=−2mA, f=100MHz

VCE=12V, IE=0A, f=1MHz

hFE rank categories

Rank

Q

R

S

hFE

120 to 270 180 to 390 270 to 560

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○c 2014 ROHM Co., Ltd. All rights reserved.

1/3

2014.10 - Rev.D

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