MIAA10WD600TMH データシートの表示（PDF） - IXYS CORPORATION
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MIAA10WD600TMH Datasheet PDF : 7 Pages
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Advanced Technical Information
MIAA10WD600TMH
Ouput Inverter T1 - T6
Symbol
VCES
VGES
VGEM
IC25
IC80
Ptot
VCE(sat)
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
VGE(th)
ICES
gate emitter threshold voltage
collector emitter leakage current
IGES
Cies
QG(on)
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
RBSOA
ISC
(SCSOA)
RthJC
RthCH
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
short circuit safe operating area
thermal resistance junction to case
thermal resistance case to heatsink
Conditions
continuous
transient
TVJ = 150°C
TC = 25°C
TC = 80°C
TC = 25°C
IC = 10 A; VGE = 15 V
TVJ = 25°C
TVJ = 125°C
IC = 0.35 A; VGE = VCE
TVJ = 25°C
VCE = VCES; VGE = 0 V
TVJ = 25°C
TVJ = 125°C
VGE = ±20 V
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 300 V; VGE = 15 V; IC = 10 A
inductive load
VCE = 300 V; IC = 10 A
VGE = ±15 V; RG = 82 W
TVJ = 25°C
inductive load
VCE = 300 V; IC = 10 A
VGE = ±15 V; RG = 82 W
TVJ = 125°C
VGE = ±15 V; RG = 82 W; IC = 20 A TVJ = 125°C
VCE = 360 V; VGE = ±15 V;
TVJ = 125°C
RG = 82 W; tp = 10 µs; non-repetitive
(per IGBT)
Ratings
min. typ. max.
600
±20
±30
18
13
70
2.1 2.6
2.3
4.5 5.5 6.5
0.6
0.8
150
450
50
32
35
180
110
0.17
0.2
32
35
190
170
0.27
0.42
VCEK < VCES-LS·dI /dt
40
1.8
0.6
Unit
V
V
V
A
A
W
V
V
V
mA
mA
nA
pF
nC
ns
ns
ns
ns
mJ
mJ
ns
ns
ns
ns
mJ
mJ
V
A
K/W
K/W
Output Inverter D1 - D6
Symbol
VRRM
IF25
IF80
VF
Definitions
max. repetitve reverse voltage
forward current
forward voltage
Qrr
IRM
trr
Erec
RthJC
RthCH
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
Conditions
IF = 10 A; VGE = 0 V
VR = 300 V
diF /dt = -300 A/µs
IF = 10 A; VGE = 0 V
(per diode)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
Ratings
min. typ. max. Unit
TVJ = 150°C
TC = 25°C
TC = 80°C
TVJ = 25°C
TVJ = 125°C
TVJ = 125°C
600 V
22 A
14 A
1.7 2.2 V
1.4
V
0.3
µC
8.8
A
95
ns
22
µJ
2.5 K/W
0.85
K/W
TC = 25°C unless otherwise stated
20070404a
-7
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