HM4-6514-B データシートの表示（PDF） - Intersil
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HM4-6514-B Datasheet PDF : 7 Pages
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HM-6514
Absolute Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7.0V
Input, Output or I/O Voltage . . . . . . . . . . . GND -0.3V to VCC +0.3V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Ranges:
HM-6514S-9, HM-6514B-9, HM-6514-9 . . . . . . . . -40oC to +85oC
HM-6514B-8, HM-6514-8 . . . . . . . . . . . . . . . . . . -55oC to +125oC
Thermal Information
Thermal Resistance (Typical)
θJA
θJC
CERDIP Package . . . . . . . . . . . . . . . . 75oC/W
15oC/W
PDIP Package . . . . . . . . . . . . . . . . . . . 75oC/W
N/A
CLCC Package . . . . . . . . . . . . . . . . . . 90oC/W
33oC/W
Maximum Storage Temperature Range . . . . . . . . .-65oC to +150oC
Maximum Junction Temperature
Ceramic Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
Plastic Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . +300oC
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6910 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
DC Electrical Specifications VCC = 5V ±10%; TA = -40oC to +85oC (HM-6514S-9, HM-6514B-9, HM-6514-9)
TA = -55oC to +125oC (HM-6514B-8, HM-6514-8)
LIMITS
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
ICCSB Standby Supply Current HM-6514-9
-
HM-6514-8
-
25
µA
IO = 0mA, E = VCC -0.3V, VCC = 5.5V
50
µA
ICCOP Operating Supply Current (Note 1)
-
ICCDR Data Retention Supply
HM-6514-9
-
Current
HM-6514-8
-
7
mA
E = 1MHz, IO = 0mA, VI = GND,
VCC = 5.5V
15
µA
IO = 0mA, VCC = 2.0V, E = VCC
25
µA
VCCDR Data Retention Supply Voltage
2.0
-
V
II
IIOZ
VIL
VIH
VOL
VOH1
VOH2
Input Leakage Current
Input/Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output High Voltage (Note 2)
-1.0
+1.0
-1.0
+1.0
-0.3
0.8
VCC -2.0
-
VCC +0.3
0.4
2.4
-
VCC -0.4
-
µA
VI = VCC or GND, VCC = 5.5V
µA
VIO = VCC or GND, VCC = 5.5V
V
VCC = 4.5V
V
VCC = 5.5V
V
IO = 2.0mA, VCC = 4.5V
V
IO = -1.0mA, VCC = 4.5V
V
IO = -100µA, VCC = 4.5V
Capacitance TA = +25oC
SYMBOL
PARAMETER
CI
Input Capacitance (Note 2)
CIO
Input/Output Capacitance (Note 2)
NOTES:
1. Typical derating 5mA/MHz increase in ICCOP.
2. Tested at initial design and after major design changes.
MAX
8
10
UNITS
pF
pF
TEST CONDITIONS
f = 1MHz, All measurements are
referenced to device GND
6-3
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