ACPL-M60L-000E データシートの表示（PDF） - Avago Technologies

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ACPL-M60L-000E

Small Outline, 5 Leads, High CMR, High Speed, Logic Gate Optocouplers

Avago Technologies 

ACPL-M60L

Small Outline, 5 Leads, High CMR, High Speed,

Logic Gate Optocouplers

Data Sheet

Description

The ACPL-M60L is an optically coupled gate that com-

bines a GaAsP light emitting diode and an integrated

high gain photo detector. The output of the detector

IC is an open collector Schottky-clamped transistor. The

internal shield provides a guaranteed common mode

transient immunity specification of 15 kV/µs at 3.3V op-

eration.

This unique design provides maximum AC and DC circuit

isolation while achieving LVTTL/LVCMOS compatibility.

The optocoupler AC and DC operational parameters are

guaranteed from –40˚C to +85˚C, allowing trouble-free

system performance.

These optocouplers are suitable for high speed logic

interfacing, input/output buffering, as line receivers in

environments that conventional line receivers cannot

tolerate and are recommended for use in extremely high

ground or induced noise environments.

Functional Diagram

ANODE 1

CATHODE 3

6 VCC

5 VO

4 GND

Features

• Dual Voltage Operation (3.3V/5V)

• Low power consumption

• 15 kV/µs minimum Common Mode Rejection (CMR)

at VCM = 1000 V (3.3V operating voltage)

• High speed: 15 MBd typical

• LVTTL/LVCMOS compatible

• Low input current capability: 5 mA

• Guaranteed AC and DC performance over tempera-

ture: –40˚C to +85˚C

• Safety approvals; UL, CSA, IEC/EN/DIN EN 60747-5-2

• Surface mountable

• Very small, low profile JEDEC Registered package

outline

Applications

• Isolated line receiver

• Computer-peripheral interfaces

• Microprocessor system interfaces

• Digital isolation for A/D, D/A conversion

• Switching power supply

• Instrument input/output isolation

• Ground loop elimination

• Pulse transformer replacement

• Field buses

CAUTION: It is advised that normal static precautions be taken in handling and assembly

of this component to prevent damage and/or degradation which may be induced by ESD.

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