NGTB15N120LWG データシートの表示（PDF） - ON Semiconductor

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NGTB15N120LWG

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NGTB15N120LWG

TYPICAL CHARACTERISTICS

1000

td(off)

tf

100

td(on)

tr

10

VCE = 600 V

VGE = 15 V

IC = 15 A

TJ = 150°C

1

5 15 25 35 45 55 65 75 85

Rg, GATE RESISTOR (W)

Figure 13. Switching Time vs. Rg

5

4.5 VGE = 15 V

4

IC = 15 A

Rg = 15 W

3.5 TJ = 150°C

3

2.5

2

1.5

1

0.5

0

375 425 475 525 575 625 675 725 775

VCE, COLLECTOR−EMITTER VOLTAGE (V)

Figure 14. Energy Loss vs. VCE

1000

td(off)

tf

100

td(on)

tr

10

VGE = 15 V

IC = 15 A

Rg = 15 W

TJ = 150°C

1

375 425 475 525 575 625 675 725 775

VCE, COLLECTOR−EMITTER VOLTAGE (V)

Figure 15. Switching Time vs. VCE

1000

100

10

100 ms

1 ms

dc operation

50 ms

1

Single Nonrepetitive

Pulse TC = 25°C

0.1 Curves must be derated

linearly with increase

in temperature

0.01

1

10

100

100

VCE, COLLECTOR−EMITTER VOLTAGE (V)

Figure 16. Safe Operating Area

1000

100

10

1

0.1

VGE = 15 V, TC = 125°C

0.01

1

10

100

1000

VCE, COLLECTOR−EMITTER VOLTAGE (V)

Figure 17. Reverse Bias Safe Operating Area

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5

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