AN28F010-120 データシートの表示（PDF） - Intel

部品番号

コンポーネント説明

メーカー

AN28F010-120

1024K (128K x 8) CMOS FLASH MEMORY

Intel 

A28F010

APPLICATIONS

The 28F010 flash-memory adds electrical chip-era-

sure and reprogrammability to EPROM non-volatility

and ease of use The 28F010 is ideal for storing

code or data-tables in applications where periodic

updates are required The 28F010 also serves as a

dense nonvolatile data acquisition and storage me-

dium

The need for code updates pervades all phases of a

system’s life from prototyping to system manufac-

ture to after-sale service In the factory during proto-

typing revisions to control code necessitate ultravio-

let erasure and reprogramming of EPROM-based

prototype codes The 28F010 replaces the 15- to

20-minute ultraviolet erasure with one-second elec-

trical erasure Electrical chip-erasure and repro-

gramming occur in the same workstation or PROM-

programmer socket

Diagnostics performed at subassembly or final as-

sembly stages often require the socketing of

EPROMs Socketed test codes are ultimately re-

placed with EPROMs containing the final program

With electrical chip-erasure and reprogramming the

28F010 is soldered to the circuit board Test codes

are programmed into the 28F010 as it resides on the

circuit board Ultimately the final code can be down-

loaded to the device The 28F010’s in-circuit altera-

bility eliminates unnecessary handling and less-reli-

able socketed connections while adding greater

test flexibility

Material and labor costs associated with code

changes increase at higher levels of system integra-

tion the most costly being code updates after sale

Code ‘‘bugs’’ or the desire to augment system func-

tionality prompt after-sale code updates Field revi-

sions to EPROM-based code require the removal of

EPROM components or entire boards

Designing with the in-circuit alterable 28F010 elimi-

nates socketed memories reduces overall material

costs and drastically cuts the labor costs associat-

ed with code updates With the 28F010 code up-

dates are implemented locally via an edge-connec-

tor or remotely over a serial communication link

The 28F010’s electrical chip-erasure byte repro-

grammability and complete nonvolatility fit well with

data accumulation needs Electrical chip-erasure

gives the designer a ‘‘blank-slate’’ in which to log

data Data can be periodically off-loaded for analy-

sis erasing the slate and repeating the cycle Or

multiple devices can maintain a ‘‘rolling window’’ of

accumulated data

With high density nonvolatility and extended cycling

capability the 28F010 offers an innovative alterna-

tive for mass storage Integrating main memory and

backup storage functions into directly executable

flash memory boosts system performance shrinks

system size and cuts power consumption Reliability

exceeds that of electromechanical media with

greater durability in extreme environmental condi-

tions

A high degree of on-chip feature integration simpli-

fies memory-to-processor interfacing Figure 3 de-

picts two 28F010s tied to the 80C186 system bus

The 28F010’s architecture minimizes interface cir-

cuitry needed for complete in-circuit updates of

memory contents

With cost-effective in-system reprogramming and

extended cycling capability the 28F010 fills the

functionality gap between traditional EPROMs and

EEPROMs EPROM-compatible specifications

straightforward interfacing and in-circuit alterability

allows designers to easily augment memory flexibili-

ty and satisfy the need for updatable nonvolatile

storage in today’s designs

4

Share Link: