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1N3879 データシートの表示(PDF) - Vishay Semiconductors

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1N3879 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
www.vishay.com
VS-1N3879(R), VS-1N3889(R) Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
1N3879(R)
50
1N3880(R)
100
1N3881(R)
-
200
1N3882(R)
300
1N3883(R)
400
1N3889(R)
50
1N3890(R)
100
1N3891(R)
-
200
1N3892(R)
300
1N3893(R)
400
Note
(1) JEDEC® registered values
VRSM, MAXIMUM
NON-REPETITIVE
PEAK VOLTAGE
V
75
150
250
350
450
75
150
250
350
450
IRRM MAXIMUM
AT TJ = 25 °C
μA
IRRM MAXIMUM
AT TJ = 100 °C
mA
IRRM MAXIMUM
AT TJ = 150 °C
mA
15 (1)
1.0 (1)
3.0 (1)
25 (1)
3.0 (1)
5.0 (1)
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at case temperature
Maximum RMS current
IF(AV)
IF(RMS)
Maximum peak, one-cycle
non-repetitive forward current
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
Maximum forward voltage drop
VFM
Note
(1) JEDEC® registered values
TEST CONDITIONS
180° conduction, half sine wave
DC
t = 10 ms No voltage
t = 8.3 ms reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal
half wave,
initial
TJ = 150 °C
t = 10 ms 100 % VRRM
t = 8.3 ms reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
TJ = 25 °C; IF = Rated IF(AV) (DC)
TC = 100 °C; IFM = x rated IF(AV)
1N3879(R)
TO 1N3883(R)
6 (1)
100
9.5
85
90
72
75 (1)
36
33
26
23
363
1.4 (1)
1.5 (1)
1N3889(R)
TO 1N3893(R)
12 (1)
100
19
170
180
145
150 (1)
145
130
103
94
1452
1.4 (1)
1.5 (1)
UNITS
A
°C
A
A2s
A2s
V
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
1N3879(R)
TO 1N3883(R)
1N3889(R)
TO 1N3893(R)
UNITS
Maximum reverse
recovery time
Maximum peak
recovery current
Maximum reverse
recovery charge
trr
IRM(REC)
Qrr
TJ = 25 °C, IF = 1 A to VR = 30 V,
dIF/dt = 100 A/μs
TJ = 25 °C, dIF/dt = 25 A/μs,
IFM = x rated IF(AV)
IFM = x rated IF(AV)
TJ = 25 °C, IF = 1 A to VR = 30 V,
dIF/dt = 100 A/μs
TJ = 25 °C, dIF/dt = 25 A/μs,
IFM = x rated IF(AV)
150
300 (1)
4 (1)
400
400
150
300 (1)
5 (1)
350
400
ns
IFM
trr
-
dir
t
dt
Qrr
IRM(REC)
nC
Note
(1) JEDEC® registered values
Revision: 11-Jan-18
2
Document Number: 93144
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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