1N3879 データシートの表示（PDF） - Vishay Semiconductors

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1N3879

Fast Recovery Diodes (Stud Version), 6 A, 12 A

Vishay Semiconductors 

www.vishay.com

VS-1N3879(R), VS-1N3889(R) Series

Vishay Semiconductors

103

1N3889 to 1N3893

102

10

TJ = 150 °C

TJ = 25 °C

1

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Instantaneous Forward Voltage (V)

Fig. 10 - Maximum Forward Voltage vs. Forward Current,

1N3889 Series

103

1N3889 to 1N3893

Ø = 180°

120°

60°

102

30°

Ø

10

Ø

Ø = DC

180°

120°

60°

30°

1

1

10

TJ = 150 °C

102

103

Average Forward Current (A)

Fig. 11 - Maximum High Level Forward Power Loss vs. Average

Forward Current, 1N3889 Series

10

140

At any rated load condition and with

120

rated VRRM applied following surge.

100

80

60

40

60 Hz

50 Hz

20

0

1

2

4 6 8 10 20 40 60

Number of Equal Amplitude Half

Cycle Current Pulses (N)

Fig. 12 - Maximum Non-Repetitive Surge Current vs.

Number of Current Pulses, 1N3879 Series

At any rated load condition and with

150

rated VRRM applied following surge.

100

60 Hz

50 Hz

50

0

1

2

4 6 8 10 20 40 60

Number of Equal Amplitude Half

Cycle Current Pulses (N)

Fig. 13 - Maximum Non-Repetitive Surge Current vs.

Number of Current Pulses, 1N3889 Series

1N3879 to 1N3883

1

1N3889 to 1N3893

10-1

10-3

10-2

10-1

1

10

Square Wave Pulse Duration (s)

Fig. 14 - Maximum Transient Thermal Impedance, Junction to Case vs. Pulse Duration, All Series

Dimensions

LINKS TO RELATED DOCUMENTS

www.vishay.com/doc?95311

Revision: 11-Jan-18

6

Document Number: 93144

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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