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NTE870 データシートの表示(PDF) - NTE Electronics

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NTE870 Datasheet PDF : 3 Pages
1 2 3
Electrical Characteristics (Cont’d): (TA = +25°C, V+/V= ±15V, IABC = 500µA)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Forward Transconductance (gm) gm
6700 9600 13000 µmhos
gm Tracking
Peak Output Current
TA = 20° to +75°C
RL = 0, IABC = 5µA
IOP RL = 0, IABC = 5µA
RL = 0, IABC = 500µA
RL = 0, TA = 20° to +75°C
5400
0.3
5.0
350 500
300
µmhos
dB
µA
650 µA
µA
Peak Output Voltage Positive
VOP RL = , 5µA IABC 500µA
+12 ±14.2
V
Peak Output Voltage Negative
Supply Current
VOS Sensitivity Positive
VOS Sensitivity Negative
Input Offset Current
ICC
SVR
IIO
RL = , 5µA IABC 500µA
IABC = 500µA, two circuit
VOS/V+
VOS/V
12 14.4
V
2.6
mA
76.5 94.0
dB
76.5 94.0
dB
0.1 0.6
µA
CMMR
CMR
80 110
dB
Common Mode Range
VICM
±12.0 ±13.5
V
Cross Talk
CT 20Hz < f < 20kHz, Note 2
– –100 100 dB
Differential Input Current
IID IABC = 0, Input = ±4V
0.02 100 nA
Leakage Current
Input Resistance
ILEAK
RIN
IABC = 0
0.2
0
nA
10 26
k
Open Loop Bandwidth
2
MHz
Slew Rate
SR
50
V/µs
Buffer Input Current
Note 2
0.4 5.0
µA
Peak Buffer Output Voltage
Note 2
10
V
Note 1. Open unless otherwise specified. The inputs to the buffers are grounded and the outputs
are open.
Note 2. ROUT = 5kconnected from the buffer output to Vand the input buffer is connected to
the transconductance amplifier output. IABC = 500µA.

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