SI7120DN(2005) データシートの表示（PDF） - Vishay Semiconductors
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SI7120DN Datasheet PDF : 5 Pages
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Si7120DN
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min Typ Max Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 10 A
VGS = 4.5 V, ID = 8.2 A
VDS = 15 V, ID = 10 A
IS = 3.2 A, VGS = 0 V
1.5
2.5
3.5
V
"100
nA
1
mA
5
30
A
0.015
0.019
W
0.023
0.028
35
S
0.78
1.2
V
Total Gate Charge
Qg
30
45
Gate-Source Charge
Qgs
VDS = 10 V, VGS = 10 V, ID = 10 A
6.9
nC
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qgd
Rg
td(on)
tr
td(off)
tf
VDD = 30 V, RL = 30 W
ID ^ 1 A, VGEN = 10 V, Rg = 6 W
5.8
0.65
1.3
1.95
W
14
25
12
20
50
80
ns
12
20
Source-Drain Reverse Recovery Time
trr
IF = 3.2 A, di/dt = 100 A/ms
60
100
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40.0
35.0
30.0
VGS = 10 thru 5 V
25.0
4V
20.0
15.0
10.0
5.0
3V
0.0
0.0
1.0
2.0
3.0
4.0
5.0
VDS − Drain-to-Source Voltage (V)
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2
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
0.0
0.0
Transfer Characteristics
TC = 125_C
25_C
−55_C
1.0
2.0
3.0
4.0
5.0
VGS − Gate-to-Source Voltage (V)
Document Number: 72771
S-51128—Rev. D, 13-Jun-05
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