STL31N65M5 データシートの表示（PDF） - STMicroelectronics

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STL31N65M5

N-channel 650 V, 0.135 Ω typ., 15 A MDmesh™ V Power MOSFET in a PowerFLAT™ 8x8 HV package

STMicroelectronics 

STL31N65M5

Electrical characteristics

Symbol

Parameter

td (v)

tr (v)

tf (i)

tc(off)

Voltage delay time

Voltage rise time

Current fall time

Crossing time

Table 6. Switching times

Test conditions

VDD = 400 V, ID = 14 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 20)

Min. Typ. Max. Unit

- 46 - ns

-

8

- ns

- 8.5 - ns

- 11 - ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

ISD (1) Source-drain current

-

ISDM (1),(2) Source-drain current (pulsed)

-

VSD (3) Forward on voltage

ISD = 15 A, VGS = 0

-

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

-

ISD = 15 A, di/dt= 100 A/µs

-

VDD = 100 V (see Figure 17)

-

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 15 A, di/dt= 100 A/µs

-

VDD = 100 V, Tj = 150 °C

-

(see Figure 17)

-

1. The value is rated according to Rthj-case and limited by package.

2. Pulse width limited by safe operating area

3. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

15 A

60 A

1.5 V

290

ns

4

µC

27

A

340

ns

5

µC

29

A

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