07N65C3(2009) データシートの表示（PDF） - Infineon Technologies
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07N65C3 Datasheet PDF : 15 Pages
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SPP07N65C3, SPI07N65C3
SPA07N65C3
CoolMOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
V DS
RDS(on)
ID
650 V
0.6 Ω
7.3 A
• Periodic avalanche rated
PG-TO220-3 PG-TO262-3-1 PG-TO220
• Extreme dv/dt rated
2
• High peak current capability
• Improved transconductance
23
1
P-TO220-3-31
• PG-TO-220-3 : Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-1
23
1
Type
SPP07N65C3
SPI07N65C3
SPA07N65C3
Package
PG-TO220
PG-TO262-3
PG-TO220-3
Marking
07N65C3
07N65C3
07N65C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=1.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=2.5A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
Value
SPP_I
SPA
7.3
7.31)
4.6
4.61)
21.9
21.9
230
230
0.5
0.5
2.5
2.5
±20
±20
±30
±30
83
32
-55...+150
Unit
A
A
mJ
A
V
W
°C
Rev. 1.91
Page 1
2009-07-23
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