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ISPLSI2064VE-280LTN100 データシートの表示(PDF) - Lattice Semiconductor

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ISPLSI2064VE-280LTN100
Lattice
Lattice Semiconductor Lattice
ISPLSI2064VE-280LTN100 Datasheet PDF : 17 Pages
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Specifications ispLSI 2064VE
Switching Test Conditions
Input Pulse Levels
GND to 3.0V
Input Rise and Fall Time
Input Timing Reference Levels
1.5 ns 10% to 90%
1.5V
Output Timing Reference Levels
1.5V
Output Load
3-state levels are measured 0.5V from
steady-state active level.
See Figure 2
Table 2-0003/2064VE
Output Load Conditions (see Figure 2)
Figure 2. Test Load
+ 3.3V
R1
Device
Output
R2
Test
Point
CL*
TEST CONDITION
A
Active High
B
Active Low
Active High to Z
C
at VOH -0.5V
Active Low to Z
at VOL+0.5V
R1
316
316
R2
348
348
348
348
CL
35pF
35pF
35pF
5pF
316
3485pF
Table 2-0004/2064V
*CL includes Test Fixture and Probe Capacitance.
0213A/2064V
DC Electrical Characteristics
Over Recommended Operating Conditions
SYMBOL
PARAMETER
CONDITION
MIN. TYP.3 MAX. UNITS
VOL
Output Low Voltage
IOL= 8 mA
0.4
V
VOH
IIL
IIH
IIL-isp
IIL-PU
IOS1
Output High Voltage
Input or I/O Low Leakage Current
Input or I/O High Leakage Current
BSCAN Input Low Leakage Current
I/O Active Pull-Up Current
Output Short Circuit Current
IOH = -4 mA
0V VIN VIL (Max.)
(VCC – 0.2)V VIN VCC
VCC VIN 5.25V
0V VIN VIL
0V VIN VIL
VCC= 3.3V, VOUT= 0.5V
2.4
V
-10 µA
10
µA
10
µA
– -150 µA
– -150 µA
– -100 mA
ICC2, 4 Operating Power Supply Current
VIL= 0.0V, VIH = 3.0V
fCLOCK = 1 MHz
90
mA
1. One output at a time for a maximum duration of one second. VOUT = 0.5V was selected to avoid test
problems by tester ground degradation. Characterized but not 100% tested.
Table 2-0007/2064VE
2. Measured using four 16-bit counters.
3. Typical values are at VCC= 3.3V and TA= 25°C.
4. Maximum ICC varies widely with specific device configuration and operating frequency. Refer to the Power Consumption
section of this data sheet and Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM to
estimate maximum ICC .
4

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