N25S830HAS22IT データシートの表示（PDF） - ON Semiconductor

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N25S830HAS22IT

256Kb Low Power Serial SRAMs 32K × 8 bit Organization

ON Semiconductor 

N25S0830HA

Absolute Maximum Ratings1

Item

Symbol

Rating

Unit

Voltage on any pin relative to VSS

VIN,OUT

–0.3 to VCC+0.3

V

Voltage on VCC Supply Relative to VSS

VCC

–0.3 to 4.5

V

Power Dissipation

PD

500

mW

Storage Temperature

TSTG

–40 to 125

oC

Operating Temperature

TA

-40 to +85

oC

Soldering Temperature and Time

TSOLDER

260oC, 10sec

oC

1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional

operation of the device at these or any other conditions above those indicated in the operating section of this specification is not

implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Operating Characteristics (Over Specified Temperature Range)

Item

Symbol

Test Conditions

Min.

Supply Voltage

VCC

Input High Voltage

VIH

Input Low Voltage

VIL

Output High Voltage

VOH

Output Low Voltage

VOL

Input Leakage Current

ILI

Output Leakage Current ILO

Read/Write Operating

Current

ICC1

ICC2

ICC3

Standby Current

ISB

IOH = -0.4mA

IOL = 1mA

CS = VCC, VIN = 0 to VCC

CS = VCC, VOUT = 0 to VCC

F = 1MHz, IOUT = 0

F = 10MHz, IOUT = 0

F = fCLK MAX, IOUT = 0

CS = VCC, VIN = VSS or VCC

2.7

0.7 x VCC

–0.3

VCC–0.5

1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and are not 100% tested.

Typ1

1

Max Unit

3.6

V

VCC+0.3 V

0.8

V

V

0.2

V

0.5

µA

0.5

µA

3

mA

6

mA

10

mA

4

µA

Capacitance1

Item

Symbol

Test Condition

Input Capacitance

I/O Capacitance

CIN

VIN = 0V, f = 1 MHz, TA = 25oC

CI/O

VIN = 0V, f = 1 MHz, TA = 25oC

1. These parameters are verified in device characterization and are not 100% tested

Min Max Unit

7

pF

7

pF

Rev. 9 | Page 3 of 15 | www.onsemi.com

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