CY62128EV30LL-55ZXET(2012) データシートの表示（PDF） - Cypress Semiconductor
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CY62128EV30LL-55ZXET Datasheet PDF : 18 Pages
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CY62128EV30 MoBL® Automotive
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature with
power applied .......................................... –55 °C to +125 °C
Supply voltage to ground
potential .......................................–0.3 V to VCC(max) + 0.3 V
DC voltage applied to outputs
in High Z state [3, 4] ......................–0.3 V to VCC(max) + 0.3 V
DC input voltage [3, 4] ...................–0.3 V to VCC(max) + 0.3 V
Output current into outputs (LOW) ............................. 20 mA
Static discharge voltage ......................................... > 2001 V
(MIL-STD-883, Method 3015)
Latch up current ..................................................... > 200 mA
Operating Range
Device
Range
Ambient
Temperature
VCC[5]
CY62128EV30LL Automotive-A –40 °C to +85 °C 2.2 V to
Automotive-E –40 °C to +125 °C 3.6 V
Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
45 ns (Auto-A)
55 ns (Auto-E)
Min Typ [6] Max
Min Typ [6] Max
Unit
VOH
VOL
VIH
VIL
IIX
IOZ
ICC
ISB1[7]
ISB2[7]
Output HIGH voltage IOH = –0.1 mA, VCC < 2.70 V 2.0 –
–
2.0 –
–
V
IOH = –1.0 mA, VCC > 2.70 V 2.4 –
–
2.4 –
–
V
Output LOW voltage IOL = 0.1 mA
––
0.4
––
0.4
V
IOL = 2.1 mA, VCC > 2.70 V
––
0.4
––
0.4
V
Input HIGH voltage
VCC = 2.2 V to 2.7 V
1.8 – VCC + 0.3 V 1.8 – VCC + 0.3 V V
VCC = 2.7 V to 3.6 V
2.2 – VCC + 0.3 V 2.2 – VCC + 0.3 V V
Input LOW voltage
VCC = 2.2 V to 2.7 V
–0.3 –
0.6 –0.3 –
0.6
V
VCC = 2.7 V to 3.6 V
–0.3 –
0.8 –0.3 –
0.8
V
Input leakage current GND < VIN < VCC
–1 –
+1
–4 –
+4
A
Output leakage current GND < VO< VCC, output disabled –1 –
+1
–4 –
+4
A
VCC operating supply f = fmax = 1/tRC VCC = VCCmax – 11
16
– 11
35
mA
current
f = 1 MHz
IOUT = 0 mA
CMOS levels
– 1.3
2.0
– 1.3
4.0
mA
Automatic CE
CE1 > VCC0.2 V, CE2 < 0.2 V, –
1
power-down
VIN > VCC – 0.2 V, VIN < 0.2 V,
current — CMOS inputs f = fmax (address and data only),
f = 0 (OE and WE), VCC = 3.60 V
Automatic CE
CE1 > VCC – 0.2 V, CE2 < 0.2 V, –
1
power-down
VIN > VCC – 0.2 V or VIN < 0.2 V,
current — CMOS inputs f = 0, VCC = 3.60 V
4
–1
35
A
4
–1
30
A
Notes
3. VIL(min) = –2.0 V for pulse durations less than 20 ns.
4. VIH(max) = VCC + 0.75 V for pulse durations less than 20 ns.
5. Full device AC operation assumes a 100 s ramp time from 0 to VCC(min) and 200 s wait time after VCC stabilization.
6. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C.
7. Chip enables (CE1 and CE2) must be at CMOS level to meet the ISB1 / ISB2 / ICCDR spec. Other inputs can be left floating.
Document #: 001-65528 Rev. *B
Page 5 of 18
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