IXGH32N170 データシートの表示（PDF） - IXYS CORPORATION
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IXGH32N170 Datasheet PDF : 5 Pages
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Symbol
gfs
IC(ON)
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
VGE = 10V, VCE = 10V
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V
VCE = 0.6 VCES, RG = Roff = 2.7 Ω
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
VCE = 0.6 VCES, RG = Roff = 2.7 Ω
22 30
S
120
A
3500
pF
165
pF
40
pF
155
nC
30
nC
51
nC
45
ns
38
ns
270 500 ns
250 500 ns
11 20 mJ
48
ns
42
ns
6.0
mJ
360
ns
560
ns
14
mJ
0.35 K/W
(TO-247)
0.25
K/W
IXGH 32N170
IXGT 32N170
TO-247 AD Outline
∅P
e
Dim. Millimeter
Min. Max.
A
4.7 5.3
AA12
2.2 2.54
2.2 2.6
b
1.0 1.4
bb12
1.65 2.13
2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Min Recommended Footprint
Dim. Millimeter
Min. Max.
A
4.9 5.1
A1
2.7 2.9
A2
.02 .25
b 1.15 1.45
b2
1.9 2.1
C
.4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e
5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
L2 1.00 1.15 .039 .045
L3
0.25 BSC
.010 BSC
L4 3.80 4.10 .150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
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