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IR3629 データシートの表示(PDF) - International Rectifier

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IR3629 Datasheet PDF : 23 Pages
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Application Information
Design Example:
The following example is a typical application for
IR3629. The application circuit is shown on page
18.
Vin=12V,(13.2V,max )
Vo=1.5V
Io=12 A
ΔVo30mV(output voltage ripple)
Fs=600 kHz
Output Voltage Programming
Output voltage is programmed by reference
voltage and external voltage divider. The Fb pin
is the inverting input of the error amplifier, which
is internally referenced to 0.6V. The divider is
ratioed to provide 0.6V at the Fb pin when the
output is at its desired value. The output voltage
is defined by using the following equation:
Vo
= Vref
⎜⎜⎝⎛1 +
R8
R9
⎟⎟⎠⎞
--( 4 )
When an external resistor divider is connected to
the output as shown in figure 10.
IRIR33662249
Fb
VOUT
R8
R9
Fig. 10: Typical application of the IR3629 for
programming the output voltage
Equation (4) can be rewritten as:
R9
=
R8
⎜⎜⎝⎛
V
Vref
V O ref
⎟⎟⎠⎞
--(5 )
For the calculated values of R8 and R9 see
feedback compensation section.
11/26/2007
IR3629/IR3629A MPbF
Soft-Start Programming
The soft-start timing can be programmed by
selecting the soft-start capacitance value. The
start-up time of the converter can be calculated
by using:
CSS 20μA *Tstart --(1)
Where Tstart is the desired start-up time (ms).
For a start-up time of 10ms, the soft-start
capacitor will be 0.2uF. Choose a ceramic
capacitor at 0.22uF.
Vc supply for single input voltage
To drive the high side switch, it is necessary to
supply a gate voltage at least 4V greater than the
bus voltage. This is achieved by using a charge
pump configuration as shown in figure 11. This
method is simple and inexpensive. The operation
of the circuit is as follows: when the lower
MOSFET is turned on, the capacitor (C1) is
pulled down to ground and charges, up to VBUS
value, through the diode (D1). The bus voltage
will be added to this voltage when the upper
MOSFET turns on in the next cycle, and
providing supply voltage (Vc) through diode (D2).
Vc is approximately:
( ) VC 2 Vbus VD1 +VD2 --(6 )
A capacitors in the range of 0.1uF is generally
adequate for most applications. Fast recovery
diodes must be used to minimize the amount of
charge fed back from the charge pump capacitor
into VBUS. The diodes need to be able to block
the full power rail voltage, which is seen when
the high-side MOSFET is switched on. For low-
voltage applications, schottky diodes can be
used to minimize forward drop.
VBUS
IRIR3632692/249A
D1
C3
D2
Vc
C2
VBUS
C1
Q1
L
HDrv
Q2
Fig. 11: Charge pump circuit to generate
Vc voltage
11

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