VS-2N5207 データシートの表示（PDF） - Vishay Semiconductors
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VS-2N5207 Datasheet PDF : 8 Pages
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VS-2N681, VS-2N5205 Series
Vishay Semiconductors
SWITCHING
PARAMETER
SYMBOL
VDM = 25 V to 600 V
Maximum non-repetitive
rate of rise of turned-on
current
VDM = 700 V to 800 V
dI/dt
Typical delay time
td
TEST CONDITIONS
TC = 125 °C, VDM = Rated VDRM,
ITM = 2 x dI/dt, gate pulse = 20 V,
15 , tp = 6 μs, tr = 0.1 μs maximum
Per JEDEC standard RS-397, 5.2.2.6
TC = 125 °C, VDM = 600 V, ITM = 200 A at
400 Hz maximum, gate pulse = 20 V, 15 ,
tp = 6 μs, tr = 0.1 μs maximum
Per JEDEC standard RS-397, 5.2.2.6
TC = 25 °C, VDM = Rated VDRM, ITM = 10 A
DC resistive circuit, gate pulse = 10 V,
40 source, tp = 6 μs, tr = 0.1 μs
VALUES
2N681-92
100
75
-
1
VALUES
2N5205-07
-
-
100
1
UNITS
A/μs
μs
BLOCKING
PARAMETER
SYMBOL
Minimum critical rate of
rise of off-state voltage
dV/dt
Maximum reverse
leakage current
Note
(1) JEDEC registered value
VRRM, VDRM = 400 V
VRRM, VDRM = 500 V
VRRM, VDRM = 600 V
VRRM, VDRM = 700 V
VRRM, VDRM = 800 V
VRRM, VDRM = 1000 V
VRRM, VDRM = 1200 V
IDRM,
IRRM
TEST CONDITIONS
TJ = 125 °C, exponential
to 100 % rated VDRM
TJ = 125 °C, exponential
to 67 % rated VDRM
Gate open
circuited
TJ = 125 °C
VALUES
2N681-92
100
(typical)
250
(typical)
3.5
3.5
2.5
2.2
2
-
-
VALUES
2N5205-07
100 (1)
250
-
-
3.3
-
2.5
2
1.7
UNITS
V/μs
mA
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum required DC gate
current to trigger
Typical DC gate current to trigger
Maximum required DC gate
voltage to trigger
Typical DC gate voltage to trigger
Maximum DC gate voltage
not to trigger
Note
(1) JEDEC registered value
PGM
PG(AV)
+IGM
+VGM
-VGM
IGT
VGT
VGD
tp < 5 ms for 2N681 series;
tp < 500 μs for 2N5204 series
TC = min.
rated value
Maximum required gate trigger current
is the lowest value which will trigger all
units with + 6 V anode to cathode
TC = 25 °C
TC = 125 °C
TC = 25 °C, + 6 V anode to cathode
Maximum required gate trigger voltage
TC = -65 °C is the lowest value which will trigger all
units with + 6 V anode to cathode
TC = 25 °C
TC = 25 °C, + 6 V anode to cathode
Maximum gate voltage not to trigger is
TC = 125 °C
the maximum value which will not
trigger any unit with rated VDRM anode
to cathode
VALUES
2N681-92
5 (1)
0.5 (1)
2 (1)
10 (1)
5 (1)
80 (1)
40
18.5
30
3 (1)
2
1.5
0.25 (1)
VALUES
2N5205-07
60 (1)
0.5 (1)
2
-
5 (1)
80 (1)
40
20
30
3 (1)
2
1.5
0.25 (1)
UNITS
W
A
V
mA
V
V
Revision: 21-Sep-17
3
Document Number: 93706
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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