2N5830_D26Z データシートの表示（PDF） - Fairchild Semiconductor
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2N5830_D26Z Datasheet PDF : 7 Pages
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NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0
100
Collector-Base Breakdown Voltage
IC = 100 µA, IE = 0
120
Emitter-Base Breakdown Voltage
IE = 10 µA, IC = 0
5.0
Collector Cutoff Current
Emitter Cutoff Current
VCB = 100 V, IE = 0
VCB = 100 V, IE = 0, TA = 100 °C
VEB = 4.0 V, IC = 0
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE = 5.0 V, IC = 1.0 mA
60
VCE = 5.0 V, IC = 10 mA
80
VCE = 5.0 V, IC = 50 mA
80
VCE(sat)
Collector-Emitter Saturation Voltage IC = 1.0 mA, IB = 0.1 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
VBE(sat)
Base-Emitter Saturation Voltage
IC = 1.0 mA, IB = 0.1 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
VBE(on)
Base-Emitter On Voltage
VCE = 5.0 V, IC = 1.0 mA
SMALL SIGNAL CHARACTERISTICS
Ccb
Output Capacitance
hfe
Small-Signal Current Gain
hie
Input Impedance
VCB = 10 V, f = 1.0 MHz
IC = 10 mA, VCE = 10 V,
1.0
f = 100 MHz
IC = 1.0 mA, VCE = 10 V,
hoe
Output Admittance
f = 1.0 kHz
hfe
Small-Signal Current Gain
60
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
V
V
V
50
nA
25
µA
50
nA
500
0.15
V
0.2
V
0.25
V
0.8
V
1.0
V
1.0
V
0.8
V
4.0
pF
5.0
6.0
KΩ
40
µmho
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