KIC7S04FU データシートの表示（PDF） - KEC
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KIC7S04FU Datasheet PDF : 3 Pages
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SEMICONDUCTOR
TECHNICAL DATA
INVERTER
The KIC7S04FU is a high speed C2MOS INVERTER fabricated
with silicon gate C2MOS technology.
It achieves high speed operation similar to equivalent LSTTL while
maintaining the C2MOS low power dissipation.
The internal circuit is composed of 3 stages including buffer output,
which enables high noise immunity and stable output.
The inputs is equipped with protection circuits against static discharge
or transient excess voltage.
FEATURES
·High Speed : tpd=7ns(Typ.) at VCC=5V.
·Low Power Dissipation : ICC=1μA(Max.) at Ta=25℃.
·High Noise Immunity : VNIH=VNIL=28% VCC(Min.).
·Output Drive Capability : 5 LSTTL Loads.
·Symmetrical Output Impedance : | IOH |=IOL=2mA(Min.)
·Balanced Propagation Delays : tpLH≒tpHL
·Wide Operating Voltage Range : VCC(opr)=2～6V.
KIC7S04FU
SILICON MONOLITHIC CMOS
DIGITAL INTEGRATED CIRCUIT
B
B1
1
5
DIM MILLIMETERS
A
2.00+_ 0.20
2
A1
1.3+_ 0.1
B
2.1+_ 0.1
3
4D
B1
1.25+_ 0.1
C
0.65
D 0.2+0.10/-0.05
G
0-0.1
H
0.9 +_ 0.1
T 0.15+0.1/-0.05
T
G
USV
MAXIMUM RATINGS (Ta=25℃)
CHARACTERISTIC
SYMBOL
Supply Voltage Range
DC Input Voltage
DC Output Voltage
Input Diode Current
Output Diode Current
DC Output Current
DC VCC/Ground Current
Power Dissipation
Storage Temperature
Lead Temperature (10s)
VCC
VIN
VOUT
IIK
IOK
IOUT
ICC
PD
Tstg
TL
RATING
-0.5～7
-0.5～VCC+0.5
-0.5～VCC+0.5
±20
±20
±12.5
±25
200
-65～150
260
UNIT
V
V
V
mA
mA
mA
mA
mW
℃
℃
MARKING
SR Type Name
Lot No.
PIN CONNECTION(TOP VIEW)
NC 1
IN A 2
GND 3
5 VCC
4 OUT Y
2008. 9. 17
Revision No : 2
1/3
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