2SB1205(2012) データシートの表示（PDF） - ON Semiconductor

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2SB1205
(Rev.:2012)

Strobe High-Current Switching Applications

ON Semiconductor 

2SB1205

Continued from preceding page.

Parameter

Base Current

Collector Dissipation

Junction Temperature

Storage Temperature

Symbol

IB

PC

Tj

Tstg

Tc=25°C

Conditions

Electrical Characteristics at Ta=25°C

Parameter

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

Output Capacitance

Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Turn-On Time

Storage Time

Fall Time

Symbol

Conditions

ICBO

IEBO

hFE1

hFE2

fT

Cob

VCE(sat)

VBE(sat)

V(BR)CBO

V(BR)CEO

V(BR)EBO

ton

tstg

tf

VCB=--20V, IE=0A

VEB=--4V, IC=0A

VCE=--2V, IC=500mA

VCE=--2V, IC=--4A

VCE=--5V, IC=--200mA

VCB=--10V, f=1MHz

IC=--3A, IB=--60mA

IC=--3A, IB=--60mA

IC=--10μA, IE=0A

IC=--1mA, RBE=∞

IE=--10μA, IC=0A

See specified Test Circuit.

* : The 2SB1205 is classified by 500mA hFE as follows :

Rank

R

S

hFE

100 to 200

140 to 280

T

200 to 400

Switching Time Test Circuit

IB1

PW=20μs

D.C.≤1%

IB2

OUTPUT

INPUT

VR

RB

RL

50Ω

+

100μF

+

470μF

VBE=5V

IC=10IB1= --10IB2= --2A

VCC= --10V

Ordering Information

Device

2SB1205S-E

2SB1205T-E

2SB1205S-TL-E

2SB1205T-TL-E

Package

TP

TP

TP-FA

TP-FA

Shipping

500pcs./bag

500pcs./bag

700pcs./reel

700pcs./reel

Ratings

Unit

--0.5

A

1

W

10

W

150

°C

--55 to +150

°C

Ratings

min

typ

100*

60

--25

--20

--5

320

60

--250

--1.0

40

200

10

max

--500

--500

400*

--500

--1.3

Unit

nA

nA

MHz

pF

mV

V

V

V

V

ns

ns

ns

memo

Pb Free

No.2114-2/9

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