2SC4409(TE12L,F) データシートの表示（PDF） - Toshiba
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2SC4409(TE12L,F) Datasheet PDF : 5 Pages
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4409
Power Amplifier Applications
Power switching applications
2SC4409
Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.5V (max) (at IC = 1A)
• High speed switching time: tstg = 500ns (typ.)
• Small flat package
• PC = 1~2 W (Mounted on a ceramic substrate)
• Complementary to 2SA1681
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
2
A
Base current
IB
0.2
A
Collector power dissipation
PC
500
mW
Collector power dissipation
PC (Note 1)
1000
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55~150
°C
Note 1: 2SC4409 mounted on a ceramic substrate (250 mm2 × 0.8 t)
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-12-21
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