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BF1102,115 データシートの表示(PDF) - NXP Semiconductors.
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BF1102,115
Dual N-channel dual gate MOS-FETs
NXP Semiconductors.
BF1102,115 Datasheet PDF : 14 Pages
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NXP Semiconductors
Dual N-channel dual gate MOS-FETs
Product specification
BF1102; BF1102R
Table 1
Scattering parameters: V
DS
= 5 V; V
G2-S
= 4 V; I
D
= 15 mA; T
amb
= 25
C
f
(MHz)
s
11
MAGNITUDE
(ratio)
ANGLE
(deg)
s
21
MAGNITUDE
(ratio)
ANGLE
(deg)
s
12
MAGNITUDE
(ratio)
ANGLE
(deg)
50
100
200
300
400
500
600
700
800
900
1 000
0.987
0.981
0.961
0.933
0.899
0.867
0.834
0.805
0.779
0.758
0.740
5.6
11.1
21.9
32.1
42.0
51.1
59.9
67.9
75.7
82.1
89.0
4.069
4.042
3.926
3.778
3.593
3.412
3.216
3.010
2.804
2.656
2.509
173.5
167.0
154.4
142.4
130.6
119.6
109.2
99.0
89.2
80.3
69.9
0.001
0.002
0.005
0.006
0.007
0.007
0.007
0.006
0.007
0.007
0.009
95.4
81.3
75.8
69.6
65.6
64.4
67.5
78.7
92.7
120.7
125.5
s
22
MAGNITUDE
(ratio)
0.986
0.983
0.976
0.960
0.945
0.928
0.914
0.901
0.886
0.889
0.890
ANGLE
(deg)
3.0
6.0
12.0
17.7
23.2
29.1
34.1
39.8
45.1
49.7
55.7
Table 2
Noise data: V
DS
= 5 V; V
G2-S
= 4 V; I
D
= 15 mA; T
amb
= 25
C
f
(MHz)
F
min
(dB)
opt
(ratio)
800
2
0.621
(deg)
61.61
R
n
(
)
25.85
2000 Apr 11
10
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