BF1102,115 データシートの表示（PDF） - NXP Semiconductors.
部品番号
コンポーネント説明
メーカー
BF1102,115 Datasheet PDF : 14 Pages
| |||
NXP Semiconductors
Dual N-channel dual gate MOS-FETs
Product specification
BF1102; BF1102R
FEATURES
Two low noise gain controlled amplifiers in a single
package
Specially designed for 5 V applications
Superior cross-modulation performance during AGC
High forward transfer admittance
High forward transfer admittance to input capacitance
ratio.
APPLICATIONS
Gain controlled low noise amplifier for VHF and UHF
applications such as television tuners and professional
communications equipment.
PINNING - SOT363
DESCRIPTION
PIN
BF1102
BF1102R
1
gate 1 (1)
gate 1 (1)
2
gate 2 (1 and 2) source (1 and 2)
3
drain (1)
drain (1)
4
drain (2)
drain (2)
5
source (1 and 2) gate 2 (1 and 2)
6
gate 1 (2)
gate 1 (2)
handbook, halfpage
g2 (1, 2)
DESCRIPTION
The BF1102 and BF1102R are both two equal dual gate
MOS-FETs which have a shared source pin and a shared
gate 2 pin. Both devices have interconnected source and
substrate; an internal bias circuit enables DC stabilization
and a very good cross-modulation performance at 5 V
supply voltage; integrated diodes between the gates and
source protect against excessive input voltage surges.
Both devices have a SOT363 micro-miniature plastic
package.
654
g1 (1)
AMP1
d (1)
g1 (2)
AMP2
d (2)
123
BF1102 marking code: W1.
BF1102R marking code: W2-.
s (1, 2)
MBL029
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
Per MOS-FET unless otherwise specified
VDS
ID
Ptot
yfs
Cig1-s
Crss
F
drain-source voltage
drain current (DC)
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
Ts 102 C; note 1
ID = 15 mA
ID = 15 mA
f = 1 MHz
f = 800 MHz
Xmod
Tj
cross-modulation
input level for k = 1% at 40 dB AGC
operating junction temperature
Note
1. Ts is the temperature at the soldering point of the source lead.
MIN. TYP. MAX. UNIT
36
43
2.8
30
2
100
7
V
40
mA
200 mW
mS
3.6 pF
50
fF
2.8 dB
dBV
150 C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
2000 Apr 11
2
Share Link: 