BF1102,115 データシートの表示（PDF） - NXP Semiconductors.
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BF1102,115 Datasheet PDF : 14 Pages
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NXP Semiconductors
Dual N-channel dual gate MOS-FETs
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
Per MOS-FET unless otherwise specified
VDS
drain-source voltage
ID
drain current (DC)
IG1
gate 1 current
IG2
gate 2 current
Ptot
total power dissipation
Tstg
storage temperature
Tj
operating junction temperature
Ts 102 C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
Product specification
BF1102; BF1102R
MIN.
MAX.
UNIT
7
V
40
mA
10
mA
10
mA
200
mW
65
+150
C
150
C
VALUE
240
UNIT
K/W
250
handboPotko, thalfpage
(mW)
200
150
100
50
0
0
50
MGS359
100
150
200
Ts (°C)
Fig.2 Power derating curve.
2000 Apr 11
3
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