BF1102,115 データシートの表示（PDF） - NXP Semiconductors.
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BF1102,115 Datasheet PDF : 14 Pages
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NXP Semiconductors
Dual N-channel dual gate MOS-FETs
0
handbook, halfpage
crosstalk
level
(dB)
−20
MCD972
−40
−60
−80
0
200
400
600
800 1000
f (MHz)
Active amplifier: VDS = 5 V; VG2 = 4 V; ID = 15 mA.
Non-active amplifier: VDS = VG1-S = 0 V.
Source and load impedances: 50 (both amplifiers).
Tamb = 25 C.
Fig.19 Crosstalk as a function of frequency:
Output level of non-active amplifier related
to output level of active amplifier; typical
values.
Product specification
BF1102; BF1102R
handbook, full pagewidth
VAGC
R1
10 kΩ
C1
4.7 nF
RGEN
50 Ω
VI
C2
R2
50 Ω
4.7 nF
RG1
VGG
C3
4.7 nF
DUT
L1
≈ 2.2 μH
C4
RL
50 Ω
4.7 nF
VDS
MGS315
2000 Apr 11
Fig.20 Cross-modulation test set-up (for one MOS-FET).
9
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