BGA2012 データシートの表示（PDF） - NXP Semiconductors.
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BGA2012 Datasheet PDF : 12 Pages
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NXP Semiconductors
1900 MHz high linear low noise amplifier
Product specification
BGA2012
FEATURES
Low current, low voltage
High linearity
High power gain
Low noise
Integrated temperature compensated biasing
Control pin for adjustment bias current.
PINNING
PIN
1
2
3
4
5, 6
RF in
VC
VS
RF out
GND
DESCRIPTION
APPLICATIONS
RF front end
Low noise amplifiers, e.g. CDMA, PHs, Dect, etc.
DESCRIPTION
Silicon Monolitic Microwave Integrated Circuit (MMIC)
amplifier consisting of an NPN double polysilicon transistor
with integrated biasing for low voltage applications in a
6-pin SOT363 plastic SMD package.
handbook, halfpage
VS
6 54
VC
BIAS
CIRCUIT
12
Top view
3
MBL251
RF in
RF out
GND
Marking code: A6-
Fig.1 Simplified outline (SOT363) and symbol.
QUICK REFERENCE DATA
SYMBOL
VS
IS
IC
|s21|2
PARAMETER
DC supply voltage
DC supply current
DC control current
insertion power gain
NF
noise figure
CONDITIONS
RF input AC coupled
VC = VS
in application circuit, see Fig.2;
f = 1900 MHz
IS = 7 mA; f = 1900 MHz
TYP.
3
7.5
0.11
16
MAX.
4.5
UNIT
V
mA
mA
dB
1.7
dB
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL
PARAMETER
CONDITIONS
VS
DC supply voltage
RF input AC coupled
VC
voltage on control pin
IS
supply current
forced by DC voltage on RF input
IC
control current
Ptot
total power dissipation
Ts 100 C
Tstg
storage temperature
Tj
operating junction temperature
MIN.
65
MAX.
4.5
VS
15
0.25
70
+150
150
UNIT
V
V
mA
mA
mW
C
C
2000 Dec 04
2
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