2SD1149 データシートの表示（PDF） - Panasonic Corporation
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2SD1149 Datasheet PDF : 3 Pages
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Transistors
2SD1149
Silicon NPN epitaxial planar type
For low-frequency amplification
Unit: mm
■ Features
0.40+–00..0150
3
0.16+–00..0160
• High forward current transfer ratio hFE
• Low collector-emitter saturation voltage VCE(sat)
• High emitter-base voltage (Collector open) VEBO
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
1
2
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
/ ■ Absolute Maximum Ratings Ta = 25°C
10˚
e e) Parameter
Symbol Rating
Unit
c e. d typ Collector-base voltage (Emitter open) VCBO
100
V
n d stag tinue Collector-emitter voltage (Base open) VCEO
100
V
a e cle con Emitter-base voltage (Collector open) VEBO
15
V
lifecy , dis Collector current
IC
20
mA
n u ct ped Peak collector current
ICP
50
mA
te tin Produ ed ty Collector power dissipation
PC
200
mW
ur tinu Junction temperature
Tj
150
°C
ing fo iscon Storage temperature
Tstg −55 to +150 °C
Marking symbo：l 1V
1 : Base
2 : Emitter
3 : Collector
EIAJ : SC-59
Mini3-G1 Package
ain onincludestyfpoell,opwlaned d ■ Electrical Characteristics Ta = 25°C ± 3°C
c ed ce Parameter
Symbol
Conditions
Min
M is ntinu tenan Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
100
isco ain Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
100
e/D e, m Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
15
D nanc e typ Collector-base cutoff current (Emitter open) ICBO VCB = 60 V, IE = 0
inte anc Collector-emitter cutoff current (Base open) ICEO VCE = 60 V, IB = 0
Ma inten Forward current transfer ratio *
hFE VCE = 10 V, IC = 2 mA
400
ma Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 1 mA
(planed Transition frequency
fT
VCB = 10 V, IE = −2 mA, f = 200 MHz
Typ Max
0.1
1.0
1 200
0.05 0.20
100
Unit
V
V
V
µA
µA
V
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
hFE
400 to 800 600 to 1 200
Publication date: January 2003
SJC00208BED
1
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