2SD12660P データシートの表示（PDF） - Panasonic Corporation

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2SD12660P

Silicon NPN triple diffusion planar type

Panasonic Corporation 

Power Transistors

2SD1266, 2SD1266A

Silicon NPN triple diffusion planar type

For power amplification

■ Features

• High forward current transfer ratio hFE which has satisfactory linearity

• Low collector-emitter saturation voltage VCE(sat)

• Full-pack package which can be installed to the heat sink with one screw

10.0±0.2

5.5±0.2

Unit: mm

4.2±0.2

2.7±0.2

φ 3.1±0.1

■ Absolute Maximum Ratings Ta = 25°C

Parameter

Symbol Rating

Unit

Collector-base voltage 2SD1266 VCBO

60

V

1.4±0.1

1.3±0.2

/ (Emitter open)

2SD1266A

80

0.8±0.1

0.5+–00..12

Collector-emitter voltage 2SD1266 VCEO

60

V

e e) (Base open)

2SD1266A

80

c e. d typ Emitter-base voltage (Collector open) VEBO

6

V

n d stag tinue Collector current

IC

3

A

a e cle con Peak collector current

ICP

5

A

lifecy , dis Collector power

TC = 25°C PC

35

W

n u ct ped dissipation

2.0

rodu d ty Junction temperature

te tin ur P tinue Storage temperature

Tj

150

°C

Tstg −55 to +150 °C

wing fodiscon ■ Electrical Characteristics Ta = 25°C ± 3°C

in n s follo laned Parameter

Symbol

Conditions

a o lude e, p Collector-emitter voltage

inc typ (Base open)

2SD1266 VCEO

2SD1266A

IC = 30 mA, IB = 0

c tinued ance Base-emitter voltage

M is con inten Collector-emitter cutoff

/Dis ma current (E-B short)

VBE

2SD1266 ICES

2SD1266A

D ance type, Collector-emitter cutoff

ten ce current (Base open)

2SD1266 ICEO

2SD1266A

ain nan Emitter-base cutoff current (Collector open)

M ainte Forward current transfer ratio

(planed m Collector-emitter saturation voltage

IEBO

hFE1 *

hFE2

VCE(sat)

VCE = 4 V, IC = 3 A

VCE = 60 V, VBE = 0

VCE = 80 V, VBE = 0

VCE = 30 V, IB = 0

VCE = 60 V, IB = 0

VEB = 6 V, IC = 0

VCE = 4 V, IC = 1 A

VCE = 4 V, IC = 3 A

IC = 3 A, IB = 0.375 A

2.54±0.3

5.08±0.5

1: Base

2: Collector

123

3: Emitter

EIAJ: SC-67

TO-220F-A1 Package

Min Typ Max Unit

60

V

80

1.8

V

200 µA

200

300 µA

300

1

mA

70

320



10

1.2

V

Transition frequency

fT

VCE = 10 V, IC = 0.5 A, f = 10 MHz

30

MHz

Turn-on time

ton

IC = 1 A, IB1 = 0.1 A, IB2 = − 0.1 mA

0.5

µs

Storage time

tstg

VCC = 50 V

2.5

µs

Fall time

tf

0.4

µs

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank

Q

P

O

hFE1

70 to 150 120 to 250 160 to 320

Publication date: April 2003

SJD00283BED

1

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