PMBFJ109 データシートの表示（PDF） - NXP Semiconductors.

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PMBFJ109

N-channel junction FETs

NXP Semiconductors. 

NXP Semiconductors

PMBFJ108; PMBFJ109; PMBFJ110

N-channel junction FETs

3. Ordering information

Table 2. Ordering information

Type number Package

Name Description

PMBFJ108

-

plastic surface mounted package; 3 leads

PMBFJ109

PMBFJ110

Version

SOT23

4. Marking

Table 3. Marking

Type number

PMBFJ108

PMBFJ109

PMBFJ110

[1] * = p: Made in Hong Kong

* = t: Made in Malaysia

* = W: Made in China

5. Limiting values

Marking code[1]

38*

39*

40*

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

VDS

drain-source voltage (DC)

-

VGSO

gate-source voltage

-

VGDO

gate-drain voltage

-

IG

forward gate current (DC)

Ptot

total power dissipation

Tstg

storage temperature

Tamb = 25 C

-

[1] -

65

Tj

junction temperature

-

[1] Mounted on an FR4 printed-circuit board.

Max Unit

25 V

25 V

25 V

50

mA

250 mW

+150 C

150 C

6. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter

Conditions

Rth(j-a) thermal resistance from junction to ambient

[1] Mounted on an FR4 printed-circuit board.

Typ

[1] 500

Unit

K/W

PMBFJ108_109_110

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 4 — 20 September 2011

© NXP B.V. 2011. All rights reserved.

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