Q65111A4190 データシートの表示（PDF） - OSRAM GmbH

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Q65111A4190

High Power Infrared Emitter (940 nm)

OSRAM GmbH 

Version 1.3

SFH 4140

Maximum Ratings (TA = 25 °C)

Parameter

Operation and storage temperature range

Reverse voltage

Forward current

Surge current

(tp ≤ 300 µs, D = 0)

Power consumption

ESD withstand voltage

(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)

Thermal resistance junction - ambient

Thermal resistance junction - solder point

Thermal resistance junction - ambient 1) page 12

Thermal resistance junction - soldering point

2) page 12

Characteristics (TA = 25 °C)

Parameter

Peak wavelength

(IF = 100 mA, tp = 20 ms)

Centroid wavelength

(IF = 100 mA, tp = 20 ms)

Spectral bandwidth at 50% of Imax

(IF = 100 mA, tp = 20 ms)

Half angle

Dimensions of active chip area

Dimensions of active chip area

Rise and fall time of Ie ( 10% and 90% of Ie max)

(IF = 100 mA, RL = 50 Ω)

Forward voltage

(IF = 100 mA, tp = 20 ms)

Forward voltage

(IF = 1 A, tp = 100 µs)

Reverse current

(VR = 5 V)

Total radiant flux

(IF=100 mA, tp=20 ms)

Symbol

Top; Tstg

VR

IF

IFSM

Ptot

VESD

RthJA

RthJS

RthJA

RthJS

Values

-40 ... 100

5

100

1

180

2

450

200

450

200

Unit

°C

V

mA

A

mW

kV

K/W

K/W

K/W

K/W

(typ)

(typ)

(typ)

Symbol

λpeak

λcentroid

∆λ

Values

950

940

42

Unit

nm

nm

nm

(typ)

(typ)

ϕ

LxW

LxW

(typ)

tr, tf

(typ (max)) VF

(typ (max)) VF

IR

(typ)

Φe

± 25

0.3 x 0.3

0.3 x 0.3

12

°

mm x

mm

mm x

mm

ns

1.5 (≤ 1.8)

V

2.3 (≤ 3)

V

not designed for µA

reverse operation

55

mW

2016-03-01

2

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