K9F1G08U0D データシートの表示（PDF） - Samsung

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K9F1G08U0D

128M x 8 Bit NAND Flash Memory

Samsung 

K9F1G08U0D

1.0 Introduction

FLASH MEMORY

1.1 GENERAL DESCRIPTION

Part Number

K9F1G08U0D-S

K9F1G08U0D-H

Vcc Range

2.7V ~ 3.6V

2.7V ~ 3.6V

1.2 FEATURES

• Voltage Supply

- 3.3V Device(K9F1G08U0D) : 2.7V ~ 3.6V

• Organization

- Memory Cell Array : (128M + 4M) x 8bit

- Data Register : (2K + 64) x 8bit

• Automatic Program and Erase

- Page Program : (2K + 64)Byte

- Block Erase : (128K + 4K)Byte

• Page Read Operation

- Page Size : (2K + 64)Byte

- Random Read :35µs(Max.)

- Serial Access : 30ns(Min.)

Organization

x8

x8

PKG Type

TSOP1

63FBGA

• Fast Write Cycle Time

- Page Program time : 250µs(Typ.)

- Block Erase Time : 2ms(Typ.)

• Command/Address/Data Multiplexed I/O Port

• Hardware Data Protection

- Program/Erase Lockout During Power Transitions

• Reliable CMOS Floating-Gate Technology

-Endurance & Data Retention : Refor to the gualification report

-ECC regnirement : 1 bit / 528bytes

• Command Driven Operation

• Unique ID for Copyright Protection

• Package :

- K9F1G08U0D-SCB0/SIB0 : Pb-FREE PACKAGE

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F1G08U0D-HCB0/HIB0 : Pb-FREE PACKAGE

63 FBGA (9 x 11 / 0.8 mm pitch)

1.3 GENERAL DESCRIPTION

Offered in 128Mx8bit, the K9F1G08X0D is a 1G-bit NAND Flash Memory with spare 32M-bit. Its NAND cell provides the most cost-

effective solution for the solid state application market. A program operation can be performed in typical 250µs on the (2K+64)Byte

page and an erase operation can be performed in typical 2ms on a (128K+4K)Byte block. Data in the data register can be read out

at 30ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-

chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification

and margining of data. Even the write-intensive systems can take advantage of the K9F1G08X0D′s extended reliability by providing

ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1G08X0D is an optimum solution for large nonvolatile

storage applications such as solid state file storage and other portable app.lications requiring non-volatility.

Samsung Confidential

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