SGB10N60A(2007) データシートの表示（PDF） - Infineon Technologies

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SGB10N60A
(Rev.:2007)

Fast IGBT in NPT-technology

Infineon Technologies 

SGB10N60A

50A

Ic

TC=80°c

40A

30A

20A

10A TC=110°c

Ic

0A

10Hz 100Hz 1kHz 10kHz 100kHz

f, SWITCHING FREQUENCY

Figure 1. Collector current as a function of

switching frequency

(Tj ≤ 150°C, D = 0.5, VCE = 400V,

VGE = 0/+15V, RG = 25Ω)

tp = 5 µs

10A

1A

0,1A

1V

1 5 µs

5 0 µs

2 0 0 µs

1ms

DC

10V

100V

1000V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 2. Safe operating area

(D = 0, TC = 25°C, Tj ≤ 150°C)

120W

100W

80W

60W

40W

20W

0W

25°C 50°C 75°C 100°C 125°C

TC, CASE TEMPERATURE

Figure 3. Power dissipation as a function

of case temperature

(Tj ≤ 150°C)

25A

20A

15A

10A

5A

0A

25°C 50°C 75°C 100°C 125°C

TC, CASE TEMPERATURE

Figure 4. Collector current as a function of

case temperature

(VGE ≤ 15V, Tj ≤ 150°C)

4

Rev. 2.3 July 07

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