K9F1G08U0B-P データシートの表示（PDF） - Samsung
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K9F1G08U0B-P Datasheet PDF : 36 Pages
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K9F1G08U0B
FLASH MEMORY
Program / Erase Characteristics
Parameter
Program Time
Dummy Busy Time for Two-Plane Page Program
Number of Partial Program Cycles
Symbol
Min
Typ
Max
Unit
tPROG
-
200
700
µs
tDBSY
-
0.5
1
µs
Nop
-
-
4
cycles
Block Erase Time
tBERS
-
1.5
2
ms
NOTE : 1. Typical value is measured at Vcc=3.3V, TA=25°C. Not 100% tested.
2. Typical program time is defined as the time within which more than 50% of the whole pages are programmed at 3.3V Vcc and 25°C temperature.
AC Timing Characteristics for Command / Address / Data Input
Parameter
Symbol
Min
CLE Setup Time
CLE Hold Time
CE Setup Time
CE Hold Time
WE Pulse Width
ALE Setup Time
ALE Hold Time
tCLS(1)
12
tCLH
5
tCS(1)
20
tCH
5
tWP
12
tALS(1)
12
tALH
5
Data Setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
Address to Data Loading Time
tDS(1)
tDH
tWC
tWH
tADL(2)
12
5
25
10
100
NOTES : 1. The transition of the corresponding control pins must occur only once while WE is held low
2. tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle
Max
-
-
-
-
-
-
-
-
-
-
-
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
10
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