K9F1G08U0B-P データシートの表示（PDF） - Samsung

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K9F1G08U0B-P

128M x 8 Bit NAND Flash Memory

Samsung 

K9F1G08U0B

FLASH MEMORY

AC Characteristics for Operation

Parameter

Symbol

Min

Data Transfer from Cell to Register

ALE to RE Delay

CLE to RE Delay

Ready to RE Low

RE Pulse Width

WE High to Busy

Read Cycle Time

RE Access Time

CE Access Time

RE High to Output Hi-Z

CE High to Output Hi-Z

CE High to ALE or CLE Don’t Care

RE High to Output Hold

RE Low to Output Hold

tR

-

tAR

10

tCLR

10

tRR

20

tRP

12

tWB

-

tRC

25

tREA

-

tCEA

-

tRHZ

-

tCHZ

-

tCSD

10

tRHOH

15

tRLOH

5

CE High to Output Hold

RE High Hold Time

Output Hi-Z to RE Low

RE High to WE Low

WE High to RE Low

Device Resetting Time(Read/Program/Erase)

tCOH

15

tREH

10

tIR

0

tRHW

100

tWHR

60

tRST

-

NOTE: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5µs.

Max

25

-

-

-

-

100

-

20

25

100

30

-

-

-

-

-

-

-

-

5/10/500(1)

Unit

µs

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

µs

11

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