2SD2216G0L データシートの表示（PDF） - Panasonic Corporation
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2SD2216G0L Datasheet PDF : 3 Pages
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Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD2216G
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB1462G
■ Features
/ • High forward current transfer ratio hFE
• Low collector-emitter saturation voltage VCE(sat)
e • SS-Mini type package, allowing downsizing of the equipment and
. automatic insertion through the tape packing.
nc d stage ■ Absolute Maximum Ratings Ta = 25°C
ycle Parameter
Symbol Rating
Unit
a e lifec Collector-base voltage (Emitter open) VCBO
60
V
ct Collector-emitter voltage (Base open) VCEO
50
V
n u du Emitter-base voltage (Collector open) VEBO
7
V
Pro Collector current
IC
100
mA
te tin ur Peakcollectorcurrent
ICP
200
mA
ing fo pe . Collector power dissipation
PC
125
mW
w ty tion Junction temperature
Tj
125
°C
in n follo ance pe ed rma Storage temperature
Tstg −55 to +125 °C
■ Package
• Code
SSMini3-F3
• Marking Symbol: Y
• Pin Name
1: Base
2: Emitter
3: Collector
a coed inclueddesmaintteennancettiynued ttyyppe test info.jp/en/ ■ Electrical Characteristics Ta = 25°C ± 3°C
u n in on d t la .co Parameter
Symbol
Conditions
Min Typ Max Unit
M is tin pla ma disc tinue bou onic Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
60
V
on d n a as Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0
50
V
isc lane isco URL .pan Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
7
V
e/D p d ing on Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0
0.1
µA
D c w ic Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0
100 µA
tenan follo .sem Forward current transfer ratio
hFE1 *2 VCE = 10 V, IC = 2 mA
160
460
in it w hFE2 *1 VCE = 2 V, IC = 100 mA
90
Ma e vis ://ww Collector-emitter saturation voltage
VCE(sat) IC = 100 mA, IB = 10 mA
0.1 0.3
V
as ttp Transition frequency
fT
VCB = 10 V, IE = −2 mA, f = 200 MHz
150
MHz
Ple h Collector output capacitance
Cob VCB = 10 V, IE = 0, f = 1 MHz
3.5
pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
No rank
hFE1
160 to 260 210 to 340 290 to 460 180 to 390
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: November 2008
SJC00406BED
1
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