1N4150W-G3-18 データシートの表示（PDF） - Vishay Semiconductors
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1N4150W-G3-18 Datasheet PDF : 3 Pages
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www.vishay.com
1N4150W-G
Vishay Semiconductors
Small Signal Fast Switching Diode
FEATURES
• Silicon epitaxial planar diode
• For general purpose and switching
• AEC-Q101 qualified available
(part number on request)
• Base P/N-G3 - green, commercial grade
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
MECHANICAL DATA
Case: SOD-123
Weight: approx. 9.4 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
ORDERING CODE
1N4150W-G 1N4150W-G3-18 or 1N4150W-G3-08
TYPE MARKING
AM
CIRCUIT CONFIGURATION
Single
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Repetitive peak reverse voltage
Maximum average forward rectified current
Maximum power dissipation (1)
VRRM
IF(AV)
Ptot
VALUE
50
200
410
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air (1)
Maximum junction temperature
Storage temperature range
Operating temperature range
RthJA
Tj
Tstg
Top
Note
(1) Valid provided that electrodes are kept at ambient temperature
VALUE
375
150
-65 to +150
-55 to +150
UNIT
V
mA
mW
UNIT
K/W
°C
°C
°C
Rev. 1.1, 22-Feb-18
1
Document Number: 85888
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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