1N4150W-G データシートの表示（PDF） - Vishay Semiconductors
部品番号
コンポーネント説明
メーカー
1N4150W-G Datasheet PDF : 3 Pages
| |||
www.vishay.com
1N4150W-G
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
IF = 1 mA
VF
IF = 10 mA
VF
IF = 50 mA
VF
IF = 100 mA
VF
IF = 200 mA
VF
VR = 50 V
IR
VR = 50 V, Tj = 150 °C
IR
VR = 0, f = 1 MHz, VHF = 50 mV
CD
IF = IR = (10 to 100) mA
iR = 0.1 x IR, RL = 100
trr
0.540
0.660
0.760
0.820
0.870
MAX.
0.620
0.740
0.860
0.920
1
100
100
2.5
4
UNIT
V
V
V
V
V
nA
μA
pF
ns
PACKAGE DIMENSIONS in millimeters (inches): SOD-123
0.45 (0.018)
0.25 (0.010)
0.5 (0.020) ref.
Cathode bar
2.85 (0.112)
2.55 (0.100)
3.85 (0.152)
3.55 (0.140)
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
Mounting Pad Layout
0.85 (0.033)
0.85 (0.033)
2.5 (0.098)
Rev. 1.1, 22-Feb-18
2
Document Number: 85888
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Share Link: 