1N4151W-G データシートの表示（PDF） - Vishay Semiconductors
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1N4151W-G Datasheet PDF : 5 Pages
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www.vishay.com
1N4151W-G
Vishay Semiconductors
Small Signal Fast Switching Diode
DESIGN SUPPORT TOOLS click logo to get started
FEATURES
• Silicon epitaxial planar diode
• Fast switching diode
• AEC-Q101 qualified available
(part number on request)
• Base P/N-G3 - green, commercial grade
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Models
Available
MECHANICAL DATA
Case: SOD-123
Weight: approx. 9.4 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
ORDERING CODE
1N4151W-G
1N4151W-G3-08 or 1N4151W-G3-18
CIRCUIT CONFIGURATION
Single
TYPE MARKING
AL
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage
Repetitive peak reverse voltage
Average rectified current half wave
rectification with resistive load (1)
f 50 Hz
VR
VRRM
IF(AV)
Surge current
Power dissipation (1)
t < 1 s and Tj = 25 °C
IFSM
Ptot
VALUE
50
75
150
500
410
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air (1)
Junction temperature
Storage temperature range
Operating temperature range
RthJA
Tj
Tstg
Top
Note
(1) Valid provided that electrodes are kept at ambient temperature
VALUE
450
150
-65 to +150
-55 to +150
UNIT
V
V
mA
mA
mW
UNIT
K/W
°C
°C
°C
Rev. 1.1, 22-Feb-18
1
Document Number: 85408
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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