20ETF04-M3 データシートの表示（PDF） - Vishay Semiconductors
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20ETF04-M3 Datasheet PDF : 8 Pages
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VS-20ETF0...PbF Series, VS-20ETF0...-M3 Series
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
VFM
rt
VF(TO)
Maximum reverse leakage current
IRM
TEST CONDITIONS
20 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
TJ = 150 °C
VR = Rated VRRM
VALUES
1.3
12.5
0.9
0.1
5.0
UNITS
V
m
V
mA
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
Reverse recovery time
trr
Reverse recovery current
Irr
Reverse recovery charge
Qrr
Snap factor
S
TEST CONDITIONS
IF at 20 Apk
100 A/μs
25 °C
Typical
VALUES
160
10
1.25
0.6
UNITS
ns
A
μC
IFM
trr
ta tb
t
dir
dt
Qrr
IRM(REC)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
TJ, TStg
RthJC
RthJA
RthCS
DC operation
Mounting surface, smooth and greased
Approximate weight
Mounting torque
minimum
maximum
Marking device
Case style TO-220AC
VALUES
-40 to +150
UNITS
°C
0.9
62
°C/W
0.5
2
g
0.07
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
20ETF02
20ETF04
20ETF06
Revision: 11-Feb-16
2
Document Number: 94096
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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