042N06N データシートの表示（PDF） - Infineon Technologies

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042N06N

OptiMOS™ Power-Transistor, 60V

Infineon Technologies 

OptiMOSTMPower-Transistor,60V

BSZ042N06NS

Table6Gatechargecharacteristics1)

Parameter

Symbol

Gate to source charge

Gate charge at threshold

Gate to drain charge2)

Switching charge

Gate charge total2)

Gate plateau voltage

Gate charge total, sync. FET

Output charge2)

Qgs

Qg(th)

Qgd

Qsw

Qg

Vplateau

Qg(sync)

Qoss

Min.

-

-

-

-

-

-

-

-

Values

Typ. Max.

9

-

5

-

5

7

8

-

27 32

4.4 -

24 -

32 40

Unit Note/TestCondition

nC VDD=30V,ID=20A,VGS=0to10V

nC VDD=30V,ID=20A,VGS=0to10V

nC VDD=30V,ID=20A,VGS=0to10V

nC VDD=30V,ID=20A,VGS=0to10V

nC VDD=30V,ID=20A,VGS=0to10V

V VDD=30V,ID=20A,VGS=0to10V

nC VDS=0.1V,VGS=0to10V

nC VDD=30V,VGS=0V

Table7Reversediode

Parameter

Diode continuous forward current

Diode pulse current

Diode forward voltage

Reverse recovery time2)

Reverse recovery charge2)

Symbol

IS

IS,pulse

VSD

trr

Qrr

Min.

-

-

-

-

-

Values

Typ. Max.

-

40

-

160

0.9 1.2

33 53

33 -

Unit Note/TestCondition

A TC=25°C

A TC=25°C

V VGS=0V,IF=20A,Tj=25°C

ns VR=30V,IF=20A,diF/dt=100A/µs

nC VR=30V,IF=20A,diF/dt=100A/µs

1) See ″Gate charge waveforms″ for parameter definition

2) Defined by design. Not subject to production test.

Final Data Sheet

6

Rev.2.3,2014-11-10

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