2SD11190RL データシートの表示（PDF） - Panasonic Corporation
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2SD11190RL Datasheet PDF : 3 Pages
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Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1119
Silicon NPN epitaxial planar type
For low-frequency power amplification
■ Features
• Low collector-emitter saturation voltage VCE(sat)
/ • Satisfactory operation performances at high efficiency with the low-
voltage power supply.
e • Mini power type package, allowing downsizing of the equipment
. and automatic insertion through the tape packing and the magazine
c ge packing.
n d cle sta ■ Absolute Maximum Ratings Ta = 25°C
a e cy Parameter
Symbol Rating
Unit
t life Collector-base voltage (Emitter open) VCBO
40
V
n u uc Collector-emitter voltage (Base open) VCEO
25
V
rod Emitter-base voltage (Collector open) VEBO
7
V
te tin r P Collectorcurrent
IC
3
A
g fou e . Peak collector current
ICP
5
A
win typ tion Collector power dissipation *
PC
1
W
in n follo nce e d a Junction temperature
Tj
150
°C
es tena typ type form / Storage temperature
Tstg −55 to +150 °C
a o lud in ce d t in /en Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
c ed inc ed ma tenan tinue type tes .jp board thickness of 1.7 mm for the collector portion
4.5±0.1
1.6±0.2
Unit: mm
1.5±0.1
1
0.4±0.08
1.5±0.1
23
0.5±0.08
3˚
0.4±0.04
45˚
3.0±0.15
Marking Symbol: T
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
M is tinu plan main discontinued bout la onic.co ■ Electrical Characteristics Ta = 25°C ± 3°C
on d n a as Parameter
Symbol
Conditions
Min Typ Max Unit
isc lane isco URL .pan Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
25
V
e/D p d ing on Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
7
V
D c w ic Collector-base cutoff current (Emitter open)
tenan follo .sem Forward current transfer ratio *1
ICBO
hFE1 *2
VCB = 10 V, IE = 0
VCE = 2 V, IC = 0.5 A
0.1
µA
230
600
Main e visit ://www Collector-emitter saturation voltage *1
hFE2
VCE(sat)
VCE = 2 V, IC = 2 A
IC = 3 A, IB = 0.1 A
150
1
V
as ttp Transition frequency
fT
VCB = 6 V, IE = −50 mA, f = 200 MHz
150
MHz
Ple h Collector output capacitance
Cob VCB = 20 V, IE = 0, f = 1 MHz
50
pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
hFE1
230 to 380 340 to 600
Publication date: November 2002
SJC00207CED
1
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