2306 データシートの表示（PDF） - Unspecified

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2306

3.5A， 30V N-CHANNEL MOSFET

Unspecified 

KIA

SEMICONDUCTORS

3.5A， 30V

N-CHANNEL MOSFET

2306

4. Electrical characteristics

Parameter

Symbol

(TA=25°C,unless otherwise noted)

Test Conditions

Min Typ Max Units

Static

Drain-source breakdown voltage

Gate threshold voltage

V(BR)DSS

VDS=0V,ID=250μA

30

-

-

V

VGS(th)

VDS=VGS, ID=250μA

1

- 1.8

V

Gate- body leakage

Zero gate voltage drain current

IGSS

VGS=+20V, VDS=0V

-

- +100 nA

IDSS

VDS=25V, VGS=0V

-

-

1

μA

On-state drain current a

VDS>4.5V, VGS=10V

6

-

-

ID(on)

A

VDS>4.5V, VGS=4.5V

4

-

-

Static drain-source on-resistance a

Forward transconductance a

RDS(on)

gfs

VGS=10V,ID=3.5A

VGS=4.5V,ID=2.8A

VDS=4.5V, ID=-3.5A

-

- 0.057

Ω

-

- 0.094

- 6.9 -

S

Diode forward voltage

Dynamicb

VSD

VGS=0V,IS=1.25A

- 0.8 1.2

V

Total gate charge

VDS=15V,

Qg

VGS=5V,ID=3.5A

- 4.2 7

Total gate charge

Gate-source charge

Gate-drain charge

Gate resistance

Qgt

8.5 20

nC

VDS=15V, VGS=10V

Qgs

ID=3.5A

- 1.9

Qgd

- 1.35 -

RG

0.5 - 2.4

Ω

Input capacitance

Output capacitance

Reverse transfer capacitance

Ciss

- 555 -

VDS=15V,VGS=0V,

Coss

- 120 -

pF

f=1MHz

Crss

-

60

-

Switching

Turn-on delay time

Rise time

Turn-off delay time

Fall time

td(on)

tr

td(off)

tf

VDD=15V, ID =1A,

RL=15Ω, RG=6Ω,

VGEN=10V

-

9 20

- 7.5 18

ns

-

17 35

- 5.2 12

Notes

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width<300μs, duty cycle<2%.

2 of 4

Rev 1.1 JAN 2014

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