MMBFJ310LT3 データシートの表示（PDF） - ON Semiconductor
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MMBFJ310LT3 Datasheet PDF : 8 Pages
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ON Semiconductort
JFET - VHF/UHF Amplifier
Transistor
N–Channel
MMBFJ309LT1
MMBFJ310LT1
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Gate Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBFJ309LT1 = 6U; MMBFJ310LT1 = 6T
Symbol
VDS
VGS
IG
Symbol
PD
RqJA
TJ, Tstg
Value
25
25
10
Max
225
1.8
556
–55 to +150
Unit
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
°C
3
1
2
CASE 318–08, STYLE 10
SOT–23 (TO–236AB)
2 SOURCE
3
GATE
1 DRAIN
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage (IG = –1.0 µAdc, VDS = 0)
V(BR)GSS –25
–
–
Vdc
Gate Reverse Current (VGS = –15 Vdc)
Gate Reverse Current (VGS = –15 Vdc, TA = 125°C)
IGSS
–
–
–
–1.0
nAdc
–
–1.0
µAdc
Gate Source Cutoff Voltage
(VDS = 10 Vdc, ID = 1.0 nAdc)
MMBFJ309
VGS(off)
–1.0
–
–4.0
Vdc
MMBFJ310
–2.0
–
–6.5
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current
(VDS = 10 Vdc, VGS = 0)
MMBFJ309
MMBFJ310
IDSS
12
–
30
mAdc
24
–
60
Gate–Source Forward Voltage (IG = 1.0 mAdc, VDS = 0)
VGS(f)
–
–
1.0
Vdc
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
|Yfs|
8.0
–
18
mmhos
Output Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
|yos|
–
–
250
µmhos
Input Capacitance (VGS = –10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)
Ciss
–
–
5.0
pF
Reverse Transfer Capacitance (VGS = –10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)
Crss
–
–
2.5
pF
Equivalent Short–Circuit Input Noise Voltage
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz)
en
–
10
–
nVń ǸHz
1. FR–5 = 1.0 0.75 0.062 in.
© Semiconductor Components Industries, LLC, 2001
1
November, 2001 – Rev. 2
Publication Order Number:
MMBFJ309LT1/D
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