ILX555K データシートの表示（PDF） - Sony Semiconductor

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ILX555K

10680 pixel × 3 line CCD Linear Sensor (Color)

Sony Semiconductor 

ILX555K

Electrooptical Characteristics (Note 1)

(Ta = 25°C, VDD = 12V, fφRS = 1MHz, Input clock = 5Vp-p,

Light source = 3200K, IR cut filter CM-500S (t = 1.0mm))

Item

Symbol

Min.

Sensitivity

Sensitivity nonuniformity

Saturation output voltage

Saturation exposure

Dark voltage average

Dark signal nonuniformity

Red

Green

Blue

Red

Green

Blue

RR

RG

RB

PRNU

VSAT

SER

SEG

SEB

VDRK

DSNU

0.98

0.98

0.85

—

1.5

0.74

0.74

0.86

—

—

Image lag

IL

—

Supply current

Total transfer efficiency

Output impedance

Offset level

IVDD

—

TTE

92

ZO

—

VOS

—

Typ. Max.

Unit

Remarks

1.5

2.02

1.5

2.02 V/(lx · s) Note 2

1.3

1.75

4

20

%

Note 3

1.8

—

V

Note 4

1.20

—

1.20

—

lx · s

Note 5

1.38

—

2

5

mV

Note 6

4

12

mV

0.02

—

%

Note 7

30

50

mA

98

—

%

360

—

Ω

4.7

—

V

Note 8

Notes)

1. In accordance with the given electrooptical characteristics, the black level is defined as the average value of

D18, D19 to D67.

2. For the sensitivity test light is applied with a uniform intensity of illumination.

3. PRNU is defined as indicated below. Ray incidence conditions are the same as for Note 2.

VOUT = 500mV (Typ.)

PRNU = (VMAX – VMIN)/2 × 100 [%]

VAVE

4. Use below the minimum value of the saturation output voltage.

5. Saturation exposure is defined as follows.

SE = VSAT

R

Where R indicates RR, RG, RB, and SE indicates SER, SEG, SEB.

6. Optical signal accumulated time τ int stands at 5.5ms.

7. VOUT-G = 500mV (Typ.)

8. Vos is defined as indicated bellow.

VOUT

VOUT indicates VOUT-R, VOUT-G and VOUT-B.

VOS

GND

–3–

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