74HCT157DR2G データシートの表示（PDF） - ON Semiconductor
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74HCT157DR2G Datasheet PDF : 9 Pages
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74HCT157
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VCC DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
Vin DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5 V
Vout DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5 V
Iin
DC Input Current, per Pin
±20
mA
Iout DC Output Current, per Pin
±25
mA
ICC DC Supply Current, VCC and GND Pins
±50
mA
PD Power Dissipation in Still Air,
SOIC Package†
500
mW
TSSOP Package†
450
Tstg Storage Temperature
– 65 to + 150
_C
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
TL Lead Temperature, 1 mm from Case for 10 Seconds
_C
(SOIC or TSSOP Package)
260
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
†Derating — SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
VCC DC Supply Voltage (Referenced to GND)
4.5
Vin, Vout DC Input Voltage, Output Voltage
0
(Referenced to GND)
TA Operating Temperature, All Package Types
– 55
tr, tf Input Rise and Fall Time
(Figure 1)
VCC = 2.0 V
0
VCC = 4.5 V
0
VCC = 6.0 V
0
Max
5.5
VCC
Unit
V
V
+ 125 _C
1000 ns
500
400
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Symbol
VIH
VIL
VOH
VOL
Iin
ICC
Parameter
Minimum High−Level Input Voltage
Maximum Low−Level Input Voltage
Minimum High−Level Output
Voltage
Maximum Low−Level Output
Voltage
Maximum Input Leakage Current
Maximum Quiescent Supply
Current (per Package)
Condition
VCC
Guaranteed Limit
(V) −55 to 25°C ≤85°C ≤125°C Unit
Vout = 0.1V
|Iout| ≤ 20mA
4.5
2.0
5.5
2.0
2.0
2.0
V
2.0
2.0
Vout = VCC − 0.1V
|Iout| ≤ 20mA
4.5
0.8
5.5
0.8
0.8
0.8
V
0.8
0.8
Vin = VIL
|Iout| ≤ 20mA
Vin = VIL
4.5
5.5
|Iout| ≤ 4.0mA 4.5
4.4
5.4
3.98
4.4
4.4
V
5.4
5.4
3.84 3.70
Vin = VIH
4.5
|Iout| ≤ 20mA
5.5
Vin = VIH
|Iout| ≤ 4.0mA 4.5
Vin = VCC or GND
5.5
0.1
0.1
0.26
±0.1
0.1
0.1
V
0.1
0.1
0.33 0.40
±1.0
±1.0
mA
Vin = VCC or GND
Iout = 0mA
5.5
4.0
40
40
mA
DICC
Additional Quiescent Supply
Current
Vin = 2.4V, Any One Input
≥ −55°C
Vin = VCC or GND, Other Inputs
Iout = 0mA
5.5
2.9
25 to 125°C
2.4
mA
1. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
2. Total Supply Current = ICC + ΣDICC.
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