74HCT1G14GW-Q100H データシートの表示（PDF） - NXP Semiconductors.

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74HCT1G14GW-Q100H

Inverting Schmitt trigger

NXP Semiconductors. 

Nexperia

74HC1G14-Q100; 74HCT1G14-Q100

Inverting Schmitt trigger

1.6

ICC

(mA)

mna030

0.8

0

0

3.0

VI (V)

6.0

Fig 11. Typical 74HC1G14-Q100 transfer characteristics; VCC = 6.0 V

2.0

ICC

(mA)

1.0

mna031

3.0

ICC

(mA)

2.0

1.0

mna032

0

0

2.5

VI (V)

5.0

Fig 12. Typical 74HCT1G14-Q100 transfer

characteristics; VCC = 4.5 V

0

0

3.0

VI (V)

6.0

Fig 13. Typical 74HCT1G14-Q100 transfer

characteristics; VCC = 5.5 V

15. Application information

74HC_HCT1G14_Q100

Product data sheet

The slow input rise and fall times cause additional power dissipation. The additional power

dissipation can be calculated using the following formula:

Padd = fi  (tr  ICC(AV) + tf  ICC(AV))  VCC

Where:

Padd = additional power dissipation (W)

fi = input frequency (MHz)

tr = rise time (ns); 10 % to 90 %

All information provided in this document is subject to legal disclaimers.

Rev. 2 — 27 December 2012

© Nexperia B.V. 2017. All rights reserved

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